ITPEC FE Morning April 2019 Question 10

Source exam: ITPEC FE Morning April 2019Topic: Computer Systems & Hardware

ITPEC FE Morning April 2019 — Question 10 of 80

SRAM vs DRAM — compare memory characteristics at the same semiconductor process.

SRAM (Static RAM):
- Uses 6 transistors per cell (flip-flop circuit)

- No refresh needed — data held as long as power is on

- Faster, more expensive, lower density

- Used for CPU cache (L1, L2, L3)

DRAM (Dynamic RAM):
- Uses 1 transistor + 1 capacitor per cell

- Requires periodic refresh (capacitor leaks charge)

- Slower, cheaper, higher density

- Used for main memory (RAM sticks)

Why not others:
- (a) SRAM consumes less power when idle (no refresh needed)

- (b) Both are volatile — data lost when power is off

- (c) Reversed — DRAM needs refresh, not SRAM

Key rule: SRAM = more transistors, faster, costlier, no refresh. DRAM = fewer transistors, cheaper, needs refresh.

AI-generated — may contain errors

The original exam layout is preserved in the image so diagrams, formulas, tables, and code remain accurate.

This question comes from an official ITPEC past paper. ITPEC Practice is an independent study tool and is not affiliated with ITPEC. See the official FE past-paper collection or Report an issue.